IPP120P04P4L03AKSA1
  • Share:

Infineon Technologies IPP120P04P4L03AKSA1

Manufacturer No:
IPP120P04P4L03AKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP120P04P4L03AKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 120A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:234 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:15000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$4.10
8

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP120P04P4L03AKSA1 IPP120P04P4L03AKSA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 100A, 10V 3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 340µA 2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs 234 nC @ 10 V 234 nC @ 10 V
Vgs (Max) ±16V +5V, -16V
Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 25 V 15000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 136W (Tc) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

Related Product By Categories

TSM210N02CX RFG
TSM210N02CX RFG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 20V 6.7A SOT23
TK090U65Z,RQ
TK090U65Z,RQ
Toshiba Semiconductor and Storage
DTMOS VI TOLL PD=230W F=1MHZ
G86N06K
G86N06K
Goford Semiconductor
N60V,RD(MAX)<8.4M@10V,VTH2V~4V ,
SIHB22N60AEL-GE3
SIHB22N60AEL-GE3
Vishay Siliconix
MOSFET N-CH 600V 21A D2PAK
BSC020N03MSGATMA1
BSC020N03MSGATMA1
Infineon Technologies
MOSFET N-CH 30V 25A/100A TDSON
SUD08P06-155L-BE3
SUD08P06-155L-BE3
Vishay Siliconix
MOSFET P-CH 60V 8.2A DPAK
NX7002BKVL
NX7002BKVL
Nexperia USA Inc.
MOSFET N-CH 60V 270MA TO236AB
AOTF12N30
AOTF12N30
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 300V 11.5A TO220-3F
SPP80P06PBKSA1
SPP80P06PBKSA1
Infineon Technologies
MOSFET P-CH 60V 80A TO220-3
BS107PSTOB
BS107PSTOB
Diodes Incorporated
MOSFET N-CH 200V 120MA E-LINE
IRF6798MTRPBF
IRF6798MTRPBF
Infineon Technologies
MOSFET N-CH 25V 37A DIRECTFET
DMP32D5LFA-7B
DMP32D5LFA-7B
Diodes Incorporated
MOSFET P-CH 30V 300MA 3DFN

Related Product By Brand

D3001N68TXPSA1
D3001N68TXPSA1
Infineon Technologies
DIODE GEN PURP 6.8KV 3910A
IPN80R4K5P7ATMA1
IPN80R4K5P7ATMA1
Infineon Technologies
MOSFET N-CH 800V 1.5A SOT223
IRL3102STRLPBF
IRL3102STRLPBF
Infineon Technologies
MOSFET N-CH 20V 61A D2PAK
IPS50R520CPAKMA1
IPS50R520CPAKMA1
Infineon Technologies
MOSFET N-CH 500V 7.1A TO251-3
CY2308SXI-1H
CY2308SXI-1H
Infineon Technologies
IC CLK ZDB 8OUT 133MHZ 16SOIC
CY9AF344LBPMC-G-JNE2
CY9AF344LBPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 288KB FLASH 64LQFP
CY7C429-20JXC
CY7C429-20JXC
Infineon Technologies
IC ASYNC FIFO MEM 2KX9 32-PLCC
CY7C1021D-10ZSXIT
CY7C1021D-10ZSXIT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 44TSOP II
S25FL256LDPNFV010
S25FL256LDPNFV010
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 8WSON
CY14B101L-SP35XC
CY14B101L-SP35XC
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 48SSOP
CY14B101LA-SZ25XI
CY14B101LA-SZ25XI
Infineon Technologies
IC NVSRAM 1MBIT PARALLEL 32SOIC
CYPD5126-40LQXIT
CYPD5126-40LQXIT
Infineon Technologies
IC MCD CCG5C WIRED 40-QFN