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| Part Number | IPP10N03LB G | IPP13N03LB G |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 9.9mOhm @ 50A, 10V | 12.8mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 20µA | 2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V | 10 nC @ 5 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1639 pF @ 15 V | 1355 pF @ 15 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 58W (Tc) | 52W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | PG-TO220-3-1 | PG-TO220-3-1 |
| Package / Case | TO-220-3 | TO-220-3 |
