IPP100N08S2L07AKSA1
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Infineon Technologies IPP100N08S2L07AKSA1

Manufacturer No:
IPP100N08S2L07AKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP100N08S2L07AKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 100A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:6.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:246 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5400 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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$4.94
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Similar Products

Part Number IPP100N08S2L07AKSA1 IPP100N08S207AKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V 7.1mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 246 nC @ 10 V 200 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 25 V 4700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

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