IPP100N06S3L-04
  • Share:

Infineon Technologies IPP100N06S3L-04

Manufacturer No:
IPP100N06S3L-04
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP100N06S3L-04 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 100A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:3.8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2.2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:362 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:17270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
510

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP100N06S3L-04 IPP100N06S3-04   IPP100N06S3L-03  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 3.8mOhm @ 80A, 10V 4.4mOhm @ 80A, 10V 3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 150µA 4V @ 150µA 2.2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 362 nC @ 10 V 314 nC @ 10 V 550 nC @ 10 V
Vgs (Max) ±16V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 17270 pF @ 25 V 14230 pF @ 25 V 26240 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 214W (Tc) 214W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

FQP30N06
FQP30N06
onsemi
MOSFET N-CH 60V 30A TO220-3
PSMN9R5-100BS,118
PSMN9R5-100BS,118
Nexperia USA Inc.
MOSFET N-CH 100V 89A D2PAK
SIDR626LDP-T1-RE3
SIDR626LDP-T1-RE3
Vishay Siliconix
MOSFET N-CH 60V 45.6A/2.4A PPAK
IXTH6N120
IXTH6N120
IXYS
MOSFET N-CH 1200V 6A TO247
NVD6416ANLT4G
NVD6416ANLT4G
Fairchild Semiconductor
MOSFET N-CH 100V 19A DPAK
FQPF13N50T
FQPF13N50T
Fairchild Semiconductor
MOSFET N-CH 500V 12.5A TO220F
RM20N650T2
RM20N650T2
Rectron USA
MOSFET N-CH 650V 20A TO220-3
PMV30UN2VL
PMV30UN2VL
Nexperia USA Inc.
MOSFET N-CH 20V 5.4A TO236AB
IRFR9210TRLPBF
IRFR9210TRLPBF
Vishay Siliconix
MOSFET P-CH 200V 1.9A DPAK
FQPF1N60T
FQPF1N60T
onsemi
MOSFET N-CH 600V 900MA TO220F
IPP70N04S307AKSA1
IPP70N04S307AKSA1
Infineon Technologies
MOSFET N-CH 40V 80A TO220-3
AUIRLL024ZTR
AUIRLL024ZTR
Infineon Technologies
MOSFET N-CH 55V 5A SOT223

Related Product By Brand

BBY5103WE6327HTSA1
BBY5103WE6327HTSA1
Infineon Technologies
DIODE TUNING 7V 20MA SOD-323
IPD60R600P7ATMA1
IPD60R600P7ATMA1
Infineon Technologies
MOSFET N-CH 650V 6A TO252-3
IRFR3410TRRPBF
IRFR3410TRRPBF
Infineon Technologies
MOSFET N-CH 100V 31A DPAK
FZ1800R17HP4B29BOSA2
FZ1800R17HP4B29BOSA2
Infineon Technologies
IGBT MODULE 1700V 1800A
IR2308PBF
IR2308PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8DIP
CY96F615RBPMC-GS-UJE1
CY96F615RBPMC-GS-UJE1
Infineon Technologies
IC MCU 16BIT 160KB FLASH 48LQFP
MB95F434KPMC-G-SNE2
MB95F434KPMC-G-SNE2
Infineon Technologies
IC MCU 8BIT 20KB FLASH 32LQFP
MB89983PFM-G-195-JNE1
MB89983PFM-G-195-JNE1
Infineon Technologies
IC MCU 8BIT 8KB MROM 64QFP
CY8C4244PVA-442Z
CY8C4244PVA-442Z
Infineon Technologies
IC MCU 32BIT 16KB FLASH 28SSOP
CY7C2663KV18-550BZXC
CY7C2663KV18-550BZXC
Infineon Technologies
IC SRAM 144MBIT PARALLEL 165FBGA
CY7C1318BV18-200BZI
CY7C1318BV18-200BZI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
CY62147EV30LL-45ZSXAT
CY62147EV30LL-45ZSXAT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II