IPP100N06S3-03
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Infineon Technologies IPP100N06S3-03

Manufacturer No:
IPP100N06S3-03
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP100N06S3-03 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 100A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:480 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21620 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
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Similar Products

Part Number IPP100N06S3-03 IPP100N06S3-04   IPP100N06S3L-03  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V 4.4mOhm @ 80A, 10V 3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 230µA 4V @ 150µA 2.2V @ 230µA
Gate Charge (Qg) (Max) @ Vgs 480 nC @ 10 V 314 nC @ 10 V 550 nC @ 10 V
Vgs (Max) ±20V ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 21620 pF @ 25 V 14230 pF @ 25 V 26240 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 214W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3

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