IPP100N04S2L03AKSA2
  • Share:

Infineon Technologies IPP100N04S2L03AKSA2

Manufacturer No:
IPP100N04S2L03AKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP100N04S2L03AKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 100A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.71
159

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP100N04S2L03AKSA2 IPP100N04S2L03AKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 80A, 10V 3.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V 230 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V 6000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

Related Product By Categories

IRFF9122
IRFF9122
Harris Corporation
P-CHANNEL POWER MOSFET
DMN313DLT-7
DMN313DLT-7
Diodes Incorporated
MOSFET N-CH 30V 270MA SOT523
IRFB4510PBF
IRFB4510PBF
Infineon Technologies
MOSFET N-CH 100V 62A TO220AB
IPD60R170CFD7ATMA1
IPD60R170CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 14A TO252-3
IRF840ALPBF
IRF840ALPBF
Vishay Siliconix
MOSFET N-CH 500V 8A I2PAK
AOD2910E
AOD2910E
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 100V 37A TO252
STP50NE10
STP50NE10
STMicroelectronics
MOSFET N-CH 100V 50A TO220AB
BS250FTC
BS250FTC
Diodes Incorporated
MOSFET P-CH 45V 90MA SOT23-3
IXTQ230N085T
IXTQ230N085T
IXYS
MOSFET N-CH 85V 230A TO3P
2SK2719(F)
2SK2719(F)
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 3A TO3P
BSS138-F085
BSS138-F085
onsemi
MOSFET N-CH 50V 220MA SOT23
STD18N65M2-EP
STD18N65M2-EP
STMicroelectronics
MOSFET N-CH 650V 11A DPAK

Related Product By Brand

BAS40-06WH6327
BAS40-06WH6327
Infineon Technologies
RECTIFIER DIODE, SCHOTTKY
BC817K-40E6327
BC817K-40E6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BCR142B6327HTLA1
BCR142B6327HTLA1
Infineon Technologies
TRANS PREBIAS NPN 200MW SOT23-3
BSS123NH6433XTMA1
BSS123NH6433XTMA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
IR2213PBF
IR2213PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 14DIP
IRU1050-33CM
IRU1050-33CM
Infineon Technologies
IC REG LINEAR 3.3V 5A TO263
CY8C20346-24LQXI
CY8C20346-24LQXI
Infineon Technologies
IC CAPSENSE AP 16K 2048B 24QFN
MB90349CAPF-GS-477E1
MB90349CAPF-GS-477E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
CY62128EV30LL-45SXIT
CY62128EV30LL-45SXIT
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32SOIC
CY62128DV30LL-70SI
CY62128DV30LL-70SI
Infineon Technologies
IC SRAM 1MBIT PARALLEL 32SOIC
CY7C1565KV18-450BZC
CY7C1565KV18-450BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CYBLE-212006-01
CYBLE-212006-01
Infineon Technologies
RX TXRX MODULE BT TRC ANT SMD