IPP093N06N3GHKSA1
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Infineon Technologies IPP093N06N3GHKSA1

Manufacturer No:
IPP093N06N3GHKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP093N06N3GHKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 50A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):71W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP093N06N3GHKSA1 IPP093N06N3GXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 50A, 10V 9.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 34µA 4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 30 V 2900 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 71W (Tc) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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