IPP08CN10L G
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Infineon Technologies IPP08CN10L G

Manufacturer No:
IPP08CN10L G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP08CN10L G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 98A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:98A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 98A, 10V
Vgs(th) (Max) @ Id:2.4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8610 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):167W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP08CN10L G IPP08CN10N G   IPP05CN10L G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 98A (Tc) 95A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 98A, 10V 8.5mOhm @ 95A, 10V 5.1mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 130µA 4V @ 130µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 100 nC @ 10 V 163 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8610 pF @ 50 V 6660 pF @ 50 V 15600 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 167W (Tc) 167W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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