IPP070N06L G
  • Share:

Infineon Technologies IPP070N06L G

Manufacturer No:
IPP070N06L G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP070N06L G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 80A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:2V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
124

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP070N06L G IPP070N06N G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 7mOhm @ 80A, 10V 7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2V @ 150µA 4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs 126 nC @ 10 V 118 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 30 V 4100 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 214W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

IRLZ24NPBF
IRLZ24NPBF
Infineon Technologies
MOSFET N-CH 55V 18A TO220AB
SSM3J118TU(TE85L)
SSM3J118TU(TE85L)
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 1.4A UFM
TSM4NB60CH C5G
TSM4NB60CH C5G
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 4A TO251
PMXB75UPEZ
PMXB75UPEZ
Nexperia USA Inc.
MOSFET P-CH 20V 2.9A DFN1010D-3
STD10N60DM2
STD10N60DM2
STMicroelectronics
MOSFET N-CH 650V 8A DPAK
FDB86566-F085
FDB86566-F085
onsemi
MOSFET N-CH 60V 110A D2PAK
SQP50P03-07_GE3
SQP50P03-07_GE3
Vishay Siliconix
MOSFET P-CH 30V 50A TO220AB
IRF7204
IRF7204
Infineon Technologies
MOSFET P-CH 20V 5.3A 8SO
IRFS31N20DPBF
IRFS31N20DPBF
Infineon Technologies
MOSFET N-CH 200V 31A D2PAK
ZVP3306FTC
ZVP3306FTC
Diodes Incorporated
MOSFET P-CH 60V 90MA SOT23-3
BSC037N025S G
BSC037N025S G
Infineon Technologies
MOSFET N-CH 25V 21A/100A TDSON
BSO104N03S
BSO104N03S
Infineon Technologies
MOSFET N-CH 30V 10A 8DSO

Related Product By Brand

EVALM13644ATOBO1
EVALM13644ATOBO1
Infineon Technologies
EVAL CIPOS IRSM836-044A
IPS60R400CEAKMA1
IPS60R400CEAKMA1
Infineon Technologies
CONSUMER
IRF7494TR
IRF7494TR
Infineon Technologies
MOSFET N-CH 150V 5.2A 8-SOIC
CY28405OXCT
CY28405OXCT
Infineon Technologies
IC CLOCK SYNTHESIZER 48SSOP
CY2CC910OXCT
CY2CC910OXCT
Infineon Technologies
IC CLK BUFFER 1:10 650MHZ 20SSOP
MB90549GPF-G-348
MB90549GPF-G-348
Infineon Technologies
IC MCU 16BIT 256KB MROM 100QFP
MB89P637P-GT-5053SH
MB89P637P-GT-5053SH
Infineon Technologies
IC MCU 8BIT 32KB OTP 64-SH-DIP
CY90427GAVPMC-GS-534E1
CY90427GAVPMC-GS-534E1
Infineon Technologies
IC MCU 16BIT 64KB MROM 100LQFP
FM24CL16B-GTR
FM24CL16B-GTR
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC
S25FL256SDSBHB210
S25FL256SDSBHB210
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
S29GL512S10DHSS20
S29GL512S10DHSS20
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64FBGA
CY62157DV30L-55ZSXE
CY62157DV30L-55ZSXE
Infineon Technologies
IC SRAM 8MBIT PARALLEL 44TSOP II