IPP06CN10N G
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Infineon Technologies IPP06CN10N G

Manufacturer No:
IPP06CN10N G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP06CN10N G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 100A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 180µA
Gate Charge (Qg) (Max) @ Vgs:139 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9200 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):214W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP06CN10N G IPP08CN10N G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.5mOhm @ 100A, 10V 8.5mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4V @ 180µA 4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 139 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 50 V 6660 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 214W (Tc) 167W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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