IPP062NE7N3GXKSA1
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Infineon Technologies IPP062NE7N3GXKSA1

Manufacturer No:
IPP062NE7N3GXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP062NE7N3GXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 75V 80A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.2mOhm @ 73A, 10V
Vgs(th) (Max) @ Id:3.8V @ 70µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3840 pF @ 37.5 V
FET Feature:- 
Power Dissipation (Max):136W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP062NE7N3GXKSA1 IPP052NE7N3GXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 75 V 75 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 73A, 10V 5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.8V @ 70µA 3.8V @ 91µA
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3840 pF @ 37.5 V 4750 pF @ 37.5 V
FET Feature - -
Power Dissipation (Max) 136W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3

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