IPP057N06N3GXKSA1
  • Share:

Infineon Technologies IPP057N06N3GXKSA1

Manufacturer No:
IPP057N06N3GXKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPP057N06N3GXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 80A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs:82 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6600 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):115W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.82
70

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP057N06N3GXKSA1 IPP057N08N3GXKSA1   IPP057N06N3GHKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 6V, 10V 10V
Rds On (Max) @ Id, Vgs 5.7mOhm @ 80A, 10V 5.7mOhm @ 80A, 10V 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 58µA 3.5V @ 90µA 4V @ 58µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 10 V 69 nC @ 10 V 82 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6600 pF @ 30 V 4750 pF @ 40 V 6600 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 115W (Tc) 150W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

SCH2830-TL-E
SCH2830-TL-E
onsemi
MOSFET P-CH 20V 1A 6SCH
TPN2R304PL,L1Q
TPN2R304PL,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 40V 80A 8TSON
FDC604P
FDC604P
onsemi
MOSFET P-CH 20V 5.5A SUPERSOT6
SIR186DP-T1-RE3
SIR186DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 60V 60A PPAK SO-8
IXFH12N100F
IXFH12N100F
IXYS
MOSFET N-CH 1000V 12A TO247AD
DMN3053L-7
DMN3053L-7
Diodes Incorporated
MOSFET N-CH 30V 4A SOT23
ZXMN10A08E6TA
ZXMN10A08E6TA
Diodes Incorporated
MOSFET N-CH 100V 1.5A SOT26
BSC037N08NS5TATMA1
BSC037N08NS5TATMA1
Infineon Technologies
MOSFET N-CH 80V 22A/100A TDSON
RM130N200T7
RM130N200T7
Rectron USA
MOSFET N-CHANNEL 200V 132A TO247
94-2386
94-2386
Infineon Technologies
MOSFET N-CH 55V 49A D2PAK
IRFZ44ZSPBF
IRFZ44ZSPBF
Infineon Technologies
MOSFET N-CH 55V 51A D2PAK
SPP07N65C3HKSA1
SPP07N65C3HKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-3

Related Product By Brand

TLE98442QXAPPKITTOBO1
TLE98442QXAPPKITTOBO1
Infineon Technologies
TLE9844-2QX_APPKIT
IRFU3410PBF
IRFU3410PBF
Infineon Technologies
MOSFET N-CH 100V 31A IPAK
IRF3706L
IRF3706L
Infineon Technologies
MOSFET N-CH 20V 77A TO262
SPI08N80C3XKSA1
SPI08N80C3XKSA1
Infineon Technologies
MOSFET N-CH 800V 8A TO262-3
6MS16017P43W40382NOSA1
6MS16017P43W40382NOSA1
Infineon Technologies
IGBT MODULE 1700V 880A
SGP15N120XKSA1
SGP15N120XKSA1
Infineon Technologies
IGBT 1200V 30A 198W TO220-3
XC866L1FRAABKXUMA1
XC866L1FRAABKXUMA1
Infineon Technologies
IC MCU 8BIT 4KB FLASH 38TSSOP
PEB3331HTV2.1
PEB3331HTV2.1
Infineon Technologies
TELEPHONY INTERFACE CIRCUIT
MB90025FPMT-GS-206E1
MB90025FPMT-GS-206E1
Infineon Technologies
IC MCU 120LQFP
CY62157EV18LL-55BVXIT
CY62157EV18LL-55BVXIT
Infineon Technologies
IC SRAM 8MBIT PARALLEL 48VFBGA
CY7C1061G18-15BVXIT
CY7C1061G18-15BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA
CY7C1568KV18-400BZC
CY7C1568KV18-400BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA