IPP050N06N G
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Infineon Technologies IPP050N06N G

Manufacturer No:
IPP050N06N G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP050N06N G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 100A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:167 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6100 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP050N06N G IPP070N06N G   IPP080N06N G  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 100A, 10V 7mOhm @ 80A, 10V 8mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 270µA 4V @ 180µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V 118 nC @ 10 V 93 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 30 V 4100 pF @ 30 V 3500 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 250W (Tc) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3-1
Package / Case TO-220-3 TO-220-3 TO-220-3

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