IPP042N03LGHKSA1
  • Share:

Infineon Technologies IPP042N03LGHKSA1

Manufacturer No:
IPP042N03LGHKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP042N03LGHKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 70A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:70A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3900 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):79W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3-1
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$0.79
272

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPP042N03LGHKSA1 IPP042N03LGXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc) 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 30A, 10V 4.2mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 38 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 15 V 3900 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 79W (Tc) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3-1 PG-TO220-3
Package / Case TO-220-3 TO-220-3

Related Product By Categories

FDFS2P102A
FDFS2P102A
Fairchild Semiconductor
MOSFET P-CH 20V 3.3A 8SOIC
IPU80R750P7AKMA1
IPU80R750P7AKMA1
Infineon Technologies
IPU80R750 - 800V COOLMOS N-CHANN
SI4447ADY-T1-GE3
SI4447ADY-T1-GE3
Vishay Siliconix
MOSFET P-CH 40V 7.2A 8SO
STD8NF25
STD8NF25
STMicroelectronics
MOSFET N-CH 250V 8A DPAK
BUK7M15-60EX
BUK7M15-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 42.9A LFPAK33
FDN361AN
FDN361AN
Fairchild Semiconductor
MOSFET N-CH 30V 1.8A SUPERSOT3
SSM5N15FU,LF
SSM5N15FU,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 100MA USV
SIA483ADJ-T1-GE3
SIA483ADJ-T1-GE3
Vishay Siliconix
MOSFET P-CH 30V 10.6A/12A PPAK
DMG3415UQ-7
DMG3415UQ-7
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT23 T&R 3
TK4A60DA(STA4,Q,M)
TK4A60DA(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 3.5A TO220SIS
BUK6207-55C,118
BUK6207-55C,118
Nexperia USA Inc.
MOSFET N-CH 55V 90A DPAK
RD3H080SPFRATL
RD3H080SPFRATL
Rohm Semiconductor
MOSFET P-CH 45V 8A TO252

Related Product By Brand

TTB6C135N16LOFHOSA1
TTB6C135N16LOFHOSA1
Infineon Technologies
SCR MODULE 1.6KV 100A MODULE
SPP07N60C3XKSA1
SPP07N60C3XKSA1
Infineon Technologies
MOSFET N-CH 650V 7.3A TO220-3
IPP90N06S404AKSA2
IPP90N06S404AKSA2
Infineon Technologies
MOSFET N-CH 60V 90A TO220-3
FF100R12KS4HOSA1
FF100R12KS4HOSA1
Infineon Technologies
IGBT MOD 1200V 150A 780W
IPS521STRL
IPS521STRL
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 D2PAK
IFX8117ME
IFX8117ME
Infineon Technologies
IC REG LINEAR ADJ LDO REGULATOR
MB90387PMT-G-152
MB90387PMT-G-152
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
MB90224PF-GT-328-BND
MB90224PF-GT-328-BND
Infineon Technologies
IC MCU 16BIT 96KB MROM 120PQFP
S6E2C58H0AGV20000
S6E2C58H0AGV20000
Infineon Technologies
IC MCU 32BIT 1MB FLASH 144LQFP
S29GL128P11FFI020
S29GL128P11FFI020
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
S70FS01GSDSBHV213
S70FS01GSDSBHV213
Infineon Technologies
IC FLSH 1GBIT SPI/QUAD I/O 24BGA
S29GL512N11FFA02
S29GL512N11FFA02
Infineon Technologies
IC FLASH MEMORY NOR PARALLEL