IPP023N08N5AKSA1
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Infineon Technologies IPP023N08N5AKSA1

Manufacturer No:
IPP023N08N5AKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP023N08N5AKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 120A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:2.3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 208µA
Gate Charge (Qg) (Max) @ Vgs:166 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12100 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP023N08N5AKSA1 IPP027N08N5AKSA1   IPP020N08N5AKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 100A, 10V 2.7mOhm @ 100A, 10V 2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 208µA 3.8V @ 154µA 3.8V @ 280µA
Gate Charge (Qg) (Max) @ Vgs 166 nC @ 10 V 123 nC @ 10 V 223 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12100 pF @ 40 V 8970 pF @ 40 V 16900 pF @ 40 V
FET Feature - - -
Power Dissipation (Max) 300W (Tc) 214W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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