IPP019N08NF2SAKMA1
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Infineon Technologies IPP019N08NF2SAKMA1

Manufacturer No:
IPP019N08NF2SAKMA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPP019N08NF2SAKMA1 Datasheet
ECAD Model:
-
Description:
TRENCH 40<-<100V
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 191A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:3.8V @ 194µA
Gate Charge (Qg) (Max) @ Vgs:186 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:8700 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 250W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-3
Package / Case:TO-220-3
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Similar Products

Part Number IPP019N08NF2SAKMA1 IPP016N08NF2SAKMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 191A (Tc) 35A (Ta), 196A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.8V @ 194µA 3.8V @ 267µA
Gate Charge (Qg) (Max) @ Vgs 186 nC @ 10 V 255 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8700 pF @ 40 V 12000 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 250W (Tc) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO220-3 PG-TO220-3
Package / Case TO-220-3 TO-220-3

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