Infineon Technologies-IPN95R1K2P7ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	950 V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.2Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	478 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223
Package / Case:	TO-261-4, TO-261AA

Infineon Technologies IPN95R1K2P7ATMA1