Infineon Technologies-IPN80R3K3P7ATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	800 V
Current - Continuous Drain (Id) @ 25°C:	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.3Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id:	3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs:	5.8 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	120 pF @ 500 V
FET Feature:	-
Power Dissipation (Max):	6.1W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223
Package / Case:	TO-261-4, TO-261AA

Infineon Technologies IPN80R3K3P7ATMA1