IPN80R2K4P7ATMA1
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Infineon Technologies IPN80R2K4P7ATMA1

Manufacturer No:
IPN80R2K4P7ATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPN80R2K4P7ATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 2.5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.4Ohm @ 800mA, 10V
Vgs(th) (Max) @ Id:3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs:7.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:150 pF @ 500 V
FET Feature:- 
Power Dissipation (Max):6.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number IPN80R2K4P7ATMA1 IPN80R1K4P7ATMA1   IPN80R2K0P7ATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 4A (Tc) 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.4Ohm @ 800mA, 10V 1.4Ohm @ 1.4A, 10V 2Ohm @ 940mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA 3.5V @ 70µA 3.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 10 nC @ 10 V 9 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 500 V 250 pF @ 500 V 175 pF @ 500 V
FET Feature - - -
Power Dissipation (Max) 6.3W (Tc) 7W (Tc) 6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-SOT223 PG-SOT223 PG-SOT223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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