Infineon Technologies-IPN65R1K5CEATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	5.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	10.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	225 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	5W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223
Package / Case:	TO-261-4, TO-261AA

Infineon Technologies IPN65R1K5CEATMA1