Infineon Technologies-IPN60R600PFD7SATMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:	8.5 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	344 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	7W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-SOT223-4
Package / Case:	TO-261-4, TO-261AA

Infineon Technologies IPN60R600PFD7SATMA1