IPN60R600P7SATMA1
  • Share:

Infineon Technologies IPN60R600P7SATMA1

Manufacturer No:
IPN60R600P7SATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPN60R600P7SATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CHANNEL 600V 6A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):7W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-4, TO-261AA
0 Remaining View Similar

In Stock

$1.11
656

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPN60R600P7SATMA1 IPN70R600P7SATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V 600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 10.5 nC @ 10 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 400 V 364 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 7W (Tc) 6.9W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223 PG-SOT223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

Related Product By Categories

NX7002BKHH
NX7002BKHH
Nexperia USA Inc.
MOSFET N-CH 60V 350MA DFN0606-3
HUF75939P3
HUF75939P3
Fairchild Semiconductor
MOSFET N-CH 200V 22A TO220-3
TPN7R506NH,L1Q
TPN7R506NH,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 26A 8TSON
IXFX32N80Q3
IXFX32N80Q3
IXYS
MOSFET N-CH 800V 32A PLUS247-3
BUK6213-30C,118
BUK6213-30C,118
Nexperia USA Inc.
NEXPERIA BUK6213-30C - 47A, 30V,
RM80N30LD
RM80N30LD
Rectron USA
MOSFET N-CHANNEL 30V 80A TO252-2
FDB8880-ON
FDB8880-ON
onsemi
11A, 30V, 0.0145OHM, N-CHANNEL,
IRF1407L
IRF1407L
Infineon Technologies
MOSFET N-CH 75V 100A TO262
BSL802SNL6327HTSA1
BSL802SNL6327HTSA1
Infineon Technologies
MOSFET N-CH 20V 7.5A TSOP-6
AUIRFU540Z
AUIRFU540Z
Infineon Technologies
MOSFET N-CH 100V 35A IPAK
AOB10T60PL
AOB10T60PL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 10A TO263
RMW200N03TB
RMW200N03TB
Rohm Semiconductor
MOSFET N-CH 30V 20A 8PSOP

Related Product By Brand

IRF6614TR1
IRF6614TR1
Infineon Technologies
MOSFET N-CH 40V 12.7A DIRECTFET
C167CRLMHABXQLA1
C167CRLMHABXQLA1
Infineon Technologies
IC MCU 16BIT ROMLESS 144MQFP
IRS23364DSPBF
IRS23364DSPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 28SOIC
IKQ75N120CT2
IKQ75N120CT2
Infineon Technologies
IKQ75N120 - DISCRETE IGBT WITH A
CY8CTMA884AE-23
CY8CTMA884AE-23
Infineon Technologies
IC TRUETOUCH CAPSENSE 100TQFP
CY8C24423A-24PVXI
CY8C24423A-24PVXI
Infineon Technologies
IC MCU 8BIT 4KB FLASH 28SSOP
MB90497GPMC-GS-112-BND
MB90497GPMC-GS-112-BND
Infineon Technologies
IC MCU 16BIT 64KB MROM 64LQFP
MB91F362APFVS-G
MB91F362APFVS-G
Infineon Technologies
IC MCU 32BIT 512KB FLASH 208QFP
MB90F345CAPFR-GS
MB90F345CAPFR-GS
Infineon Technologies
IC MCU 16BIT 512KB FLASH 100QFP
MB90F423GAVPF-G
MB90F423GAVPF-G
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100QFP
CY7C65630-56LTXI
CY7C65630-56LTXI
Infineon Technologies
IC HUB CTLR 4PORT 56-QFN
S70GL02GT12FHAV10
S70GL02GT12FHAV10
Infineon Technologies
IC FLASH 2GBIT PARALLEL 64FBGA