IPN60R600P7SATMA1
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Infineon Technologies IPN60R600P7SATMA1

Manufacturer No:
IPN60R600P7SATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPN60R600P7SATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CHANNEL 600V 6A SOT223
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id:4V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:363 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):7W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-SOT223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number IPN60R600P7SATMA1 IPN70R600P7SATMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 700 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 1.7A, 10V 600mOhm @ 1.8A, 10V
Vgs(th) (Max) @ Id 4V @ 80µA 3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10 V 10.5 nC @ 10 V
Vgs (Max) ±20V ±16V
Input Capacitance (Ciss) (Max) @ Vds 363 pF @ 400 V 364 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 7W (Tc) 6.9W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-SOT223 PG-SOT223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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