IPL65R1K5C6SATMA1
  • Share:

Infineon Technologies IPL65R1K5C6SATMA1

Manufacturer No:
IPL65R1K5C6SATMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPL65R1K5C6SATMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 3A THIN-PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):26.6W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TSON-8-2
Package / Case:8-PowerTDFN
0 Remaining View Similar

In Stock

$0.84
572

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPL65R1K5C6SATMA1 IPL60R1K5C6SATMA1   IPL65R1K0C6SATMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc) 3A (Tc) 4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1A, 10V 1.5Ohm @ 1.1A, 10V 1Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA 3.5V @ 90µA 3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 9.4 nC @ 10 V 15 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 100 V 200 pF @ 100 V 328 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 26.6W (Tc) 26.6W (Tc) 34.7W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TSON-8-2 8-ThinPak (5x6) PG-TSON-8-2
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

Related Product By Categories

C2M1000170D
C2M1000170D
Wolfspeed, Inc.
SICFET N-CH 1700V 4.9A TO247-3
FDU6696
FDU6696
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
FQPF19N20
FQPF19N20
Fairchild Semiconductor
MOSFET N-CH 200V 11.8A TO220F
STP20NF20
STP20NF20
STMicroelectronics
MOSFET N-CH 200V 18A TO220AB
SQD40N06-14L_GE3
SQD40N06-14L_GE3
Vishay Siliconix
MOSFET N-CH 60V 40A TO252AA
PJQ4413P_R2_00001
PJQ4413P_R2_00001
Panjit International Inc.
30V P-CHANNEL ENHANCEMENT MODE M
IPT65R105G7XTMA1
IPT65R105G7XTMA1
Infineon Technologies
MOSFET N-CH 650V 24A 8HSOF
94-4737
94-4737
Infineon Technologies
MOSFET N-CH 30V 33A DPAK
IRF6655TRPBF
IRF6655TRPBF
Infineon Technologies
MOSFET N-CH 100V 4.2A DIRECTFET
BSO064N03S
BSO064N03S
Infineon Technologies
MOSFET N-CH 30V 12A 8DSO
STB8NM60N
STB8NM60N
STMicroelectronics
MOSFET N-CH 600V 7A D2PAK
IXTV98N20T
IXTV98N20T
IXYS
MOSFET N-CH 200V 98A PLUS220

Related Product By Brand

BASICPLUSDEMOBOARDTOBO1
BASICPLUSDEMOBOARDTOBO1
Infineon Technologies
EVALUATION BOARD FOR LITIX BASIC
EVAL1ED44175N01BTOBO1
EVAL1ED44175N01BTOBO1
Infineon Technologies
EVAL-1ED44175N01B
BA885E6327HTSA1
BA885E6327HTSA1
Infineon Technologies
RF DIODE PIN 50V SOT23-3
BAT2402ELSE6327XTSA1
BAT2402ELSE6327XTSA1
Infineon Technologies
BAT24 - RF MIXER AND DETECTOR SC
D740N40TXPSA1
D740N40TXPSA1
Infineon Technologies
DIODE GEN PURP 4KV 750A
IPP65R110CFDXKSA2
IPP65R110CFDXKSA2
Infineon Technologies
MOSFET N-CH 650V 31.2A TO220-3
SAF-XE167H-96F66LABES
SAF-XE167H-96F66LABES
Infineon Technologies
16-BIT FLASH RISC MCU
TLE4276DVATMA2
TLE4276DVATMA2
Infineon Technologies
IC REG LIN POS ADJ 400MA TO252-5
BGT24ATR12E6433XUMA1
BGT24ATR12E6433XUMA1
Infineon Technologies
IC SWITCH RF 32VQFN
CY3250-28XXX
CY3250-28XXX
Infineon Technologies
KIT EMULATION PSOC CY8C28XXX
CY15B104QI-20LPXC
CY15B104QI-20LPXC
Infineon Technologies
IC FRAM 4MBIT SPI 20MHZ 8GQFN
CY9AF112MPMC-GE1
CY9AF112MPMC-GE1
Infineon Technologies
IC MCU 32BIT FLASH 80-LQFP