IPL60R299CPAUMA1
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Infineon Technologies IPL60R299CPAUMA1

Manufacturer No:
IPL60R299CPAUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPL60R299CPAUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 11.1A 4VSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:11.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:299mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:3.5V @ 440µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):96W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-VSON-4
Package / Case:4-PowerTSFN
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Similar Products

Part Number IPL60R299CPAUMA1 IPL60R199CPAUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 11.1A (Tc) 16.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 6.6A, 10V 199mOhm @ 9.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 440µA 3.5V @ 660µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 32 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 1520 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 96W (Tc) 139W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-VSON-4 PG-VSON-4
Package / Case 4-PowerTSFN 4-PowerTSFN

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