Infineon Technologies-IPL60R210P6AUMA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	19.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	210mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:	37 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1750 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	151W (Tc)
Operating Temperature:	-40°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-VSON-4
Package / Case:	4-PowerTSFN

Infineon Technologies IPL60R210P6AUMA1