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| Part Number | IPL60R199CPAUMA1 | IPL60R299CPAUMA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Status | Not For New Designs | Not For New Designs |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Tc) | 11.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 199mOhm @ 9.9A, 10V | 299mOhm @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 660µA | 3.5V @ 440µA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | 22 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 100 V | 1100 pF @ 100 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 139W (Tc) | 96W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | PG-VSON-4 | PG-VSON-4 |
| Package / Case | 4-PowerTSFN | 4-PowerTSFN |
