IPL60R105P7AUMA1
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Infineon Technologies IPL60R105P7AUMA1

Manufacturer No:
IPL60R105P7AUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPL60R105P7AUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 33A 4VSON
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:105mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id:4V @ 530µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1952 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):137W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-VSON-4
Package / Case:4-PowerTSFN
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Similar Products

Part Number IPL60R105P7AUMA1 IPL60R185P7AUMA1   IPL60R125P7AUMA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 19A (Tc) 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 105mOhm @ 10.5A, 10V 185mOhm @ 5.6A, 10V 125mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id 4V @ 530µA 4V @ 280µA 4V @ 410µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 25 nC @ 10 V 36 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1952 pF @ 400 V 1081 pF @ 400 V 1544 pF @ 400 V
FET Feature - - -
Power Dissipation (Max) 137W (Tc) 81W (Tc) 111W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-VSON-4 PG-VSON-4 PG-VSON-4
Package / Case 4-PowerTSFN 4-PowerTSFN 4-PowerTSFN

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