IPL60R065C7AUMA1
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Infineon Technologies IPL60R065C7AUMA1

Manufacturer No:
IPL60R065C7AUMA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IPL60R065C7AUMA1 Datasheet
ECAD Model:
-
Description:
MOSFET HIGH POWER_NEW
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:65mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id:4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2850 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):180W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-VSON-4-1
Package / Case:4-PowerTSFN
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$10.83
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Similar Products

Part Number IPL60R065C7AUMA1 IPL60R065P7AUMA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc) 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 65mOhm @ 15.9A, 10V 65mOhm @ 15.9A, 10V
Vgs(th) (Max) @ Id 4V @ 800µA 4V @ 800µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 67 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 400 V 2895 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 180W (Tc) 201W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PG-VSON-4-1 PG-VSON-4
Package / Case 4-PowerTSFN 4-PowerTSFN

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