IPI90R800C3XKSA1
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Infineon Technologies IPI90R800C3XKSA1

Manufacturer No:
IPI90R800C3XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI90R800C3XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 6.9A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:6.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:800mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 460µA
Gate Charge (Qg) (Max) @ Vgs:42 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1100 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI90R800C3XKSA1 IPI90R500C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 6.9A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 4.1A, 10V 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 460µA 3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 100 V 1700 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 104W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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