IPI90R500C3XKSA2
  • Share:

Infineon Technologies IPI90R500C3XKSA2

Manufacturer No:
IPI90R500C3XKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI90R500C3XKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 11A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs:68 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1700 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):156W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$2.91
305

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI90R500C3XKSA2 IPI90R500C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 500mOhm @ 6.6A, 10V 500mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id 3.5V @ 740µA 3.5V @ 740µA
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V 68 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 100 V 1700 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 156W (Tc) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

TP65H070LDG-TR
TP65H070LDG-TR
Transphorm
650 V 25 A GAN FET
NVD4810NT4G
NVD4810NT4G
onsemi
NVD4810 - SINGLE N-CHANNEL POWER
SIR826BDP-T1-RE3
SIR826BDP-T1-RE3
Vishay Siliconix
MOSFET N-CH 80V 19.8A/80.8A PPAK
XP161A1355PR-G
XP161A1355PR-G
Torex Semiconductor Ltd
MOSFET N-CH 20V 4A SOT89
FQP10N20C
FQP10N20C
onsemi
MOSFET N-CH 200V 9.5A TO220-3
APT8015JVFR
APT8015JVFR
Microchip Technology
MOSFET N-CH 800V 44A ISOTOP
IRF820AS
IRF820AS
Vishay Siliconix
MOSFET N-CH 500V 2.5A D2PAK
MTP23P06V
MTP23P06V
onsemi
MOSFET P-CH 60V 23A TO220AB
IRLU2905ZPBF
IRLU2905ZPBF
Infineon Technologies
MOSFET N-CH 55V 42A IPAK
IRFS644BYDTU_AS001
IRFS644BYDTU_AS001
onsemi
MOSFET N-CH 250V 14A TO220F
IPP032N06N3GHKSA1
IPP032N06N3GHKSA1
Infineon Technologies
MOSFET N-CH 60V 120A TO220-3
R6511END3TL1
R6511END3TL1
Rohm Semiconductor
650V 11A TO-252, LOW-NOISE POWER

Related Product By Brand

EVALM105F310RTOBO1
EVALM105F310RTOBO1
Infineon Technologies
EVAL BOARD FOR IRSM005-301MH
BSC500N20NS3GATMA1
BSC500N20NS3GATMA1
Infineon Technologies
MOSFET N-CH 200V 24A TDSON-8
IPD90N04S304ATMA1
IPD90N04S304ATMA1
Infineon Technologies
MOSFET N-CH 40V 90A TO252-3
IPT012N06NATMA1
IPT012N06NATMA1
Infineon Technologies
MOSFET N-CH 60V 240A 8HSOF
IRGP30B60KD-EP
IRGP30B60KD-EP
Infineon Technologies
IGBT 600V 60A 304W TO247AD
MB88155PFT-G-412-JN-EFE1
MB88155PFT-G-412-JN-EFE1
Infineon Technologies
IC CLOCK GENERATOR EMI 8TSSOP
CY2X013LXI200T
CY2X013LXI200T
Infineon Technologies
TSBU
CY9BF566MPMC1-G-JNE2
CY9BF566MPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 544KB FLASH 80LQFP
MB89923PF-G-164-BND
MB89923PF-G-164-BND
Infineon Technologies
IC MCU 8BIT 8KB MROM 80PQFP
CY7C60123-PVXC
CY7C60123-PVXC
Infineon Technologies
IC MCU 8BIT 8KB FLASH 48SSOP
S26KS128SDABHA030
S26KS128SDABHA030
Infineon Technologies
IC FLASH 128MBIT PARALLEL 24FBGA
CY7C10612GE30-10ZSXI
CY7C10612GE30-10ZSXI
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II