IPI90R1K2C3XKSA2
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Infineon Technologies IPI90R1K2C3XKSA2

Manufacturer No:
IPI90R1K2C3XKSA2
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI90R1K2C3XKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 900V 5.1A TO262-3
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs:28 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:710 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI90R1K2C3XKSA2 IPI90R1K2C3XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Not For New Designs Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V
Current - Continuous Drain (Id) @ 25°C 5.1A (Tc) 5.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2.8A, 10V 1.2Ohm @ 2.8A, 10V
Vgs(th) (Max) @ Id 3.5V @ 310µA 3.5V @ 310µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 10 V 28 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 710 pF @ 100 V 710 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 83W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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