IPI90N06S4L04AKSA2
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Infineon Technologies IPI90N06S4L04AKSA2

Manufacturer No:
IPI90N06S4L04AKSA2
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI90N06S4L04AKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 90A TO262-3
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id:2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:13000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI90N06S4L04AKSA2 IPI90N06S4L04AKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 90A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 90A, 10V 3.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id 2.2V @ 90µA 2.2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs 170 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 25 V 13000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 150W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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