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| Part Number | IPI80P04P4L08AKSA1 | IPI80P04P4L04AKSA1 | IPI80P04P4L06AKSA1 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 80A, 10V | 4.7mOhm @ 80A, 10V | 6.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 120µA | 2.2V @ 250µA | 2.2V @ 150µA |
| Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V | 176 nC @ 10 V | 104 nC @ 10 V |
| Vgs (Max) | +5V, -16V | +5V, -16V | +5V, -16V |
| Input Capacitance (Ciss) (Max) @ Vds | 5430 pF @ 25 V | 3800 pF @ 25 V | 6580 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 75W (Tc) | 125W (Tc) | 88W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3-1 | PG-TO262-3-1 | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
