IPI80N06S405AKSA2
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Infineon Technologies IPI80N06S405AKSA2

Manufacturer No:
IPI80N06S405AKSA2
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI80N06S405AKSA2 Datasheet
ECAD Model:
-
Description:
MOSFET N-CHANNEL_55/60V
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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$1.00
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Similar Products

Part Number IPI80N06S405AKSA2 IPI80N06S407AKSA2   IPI80N06S4L05AKSA2   IPI80N06S405AKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete
FET Type - N-Channel N-Channel N-Channel
Technology - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) - 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C - 80A (Tc) 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs - 7.4mOhm @ 80A, 10V 8.5mOhm @ 40A, 4.5V 5.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id - 4V @ 40µA 2.2V @ 60µA 4V @ 60µA
Gate Charge (Qg) (Max) @ Vgs - 56 nC @ 10 V 110 nC @ 10 V 81 nC @ 10 V
Vgs (Max) - ±20V ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds - 4500 pF @ 25 V 8180 pF @ 25 V 6500 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) - 79W (Tc) 107W (Tc) 107W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type - Through Hole Through Hole Through Hole
Supplier Device Package - PG-TO262-3-1 PG-TO262-3-1 PG-TO262-3
Package / Case - TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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