IPI80N06S3L-08
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Infineon Technologies IPI80N06S3L-08

Manufacturer No:
IPI80N06S3L-08
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI80N06S3L-08 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO262-3
Delivery:
Payment:
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iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.9mOhm @ 43A, 10V
Vgs(th) (Max) @ Id:2.2V @ 55µA
Gate Charge (Qg) (Max) @ Vgs:134 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:6475 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):105W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI80N06S3L-08 IPI80N06S3L-05  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.9mOhm @ 43A, 10V 4.8mOhm @ 69A, 10V
Vgs(th) (Max) @ Id 2.2V @ 55µA 2.2V @ 115µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V 273 nC @ 10 V
Vgs (Max) ±16V ±16V
Input Capacitance (Ciss) (Max) @ Vds 6475 pF @ 25 V 13060 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 105W (Tc) 165W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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