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| Part Number | IPI80N06S3L-05 | IPI80N06S3L-08 | IPI80N06S3-05 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 55 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | 5V, 10V | 10V |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 69A, 10V | 7.9mOhm @ 43A, 10V | 5.4mOhm @ 63A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 115µA | 2.2V @ 55µA | 4V @ 110µA |
| Gate Charge (Qg) (Max) @ Vgs | 273 nC @ 10 V | 134 nC @ 10 V | 240 nC @ 10 V |
| Vgs (Max) | ±16V | ±16V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 13060 pF @ 25 V | 6475 pF @ 25 V | 10760 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 165W (Tc) | 105W (Tc) | 165W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3 | PG-TO262-3 | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
