IPI80N06S2L11AKSA1
  • Share:

Infineon Technologies IPI80N06S2L11AKSA1

Manufacturer No:
IPI80N06S2L11AKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI80N06S2L11AKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 80A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 60A, 10V
Vgs(th) (Max) @ Id:2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs:80 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2075 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):158W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
265

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI80N06S2L11AKSA1 IPI80N06S2L11AKSA2  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 60A, 10V 10.7mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 93µA 2V @ 93µA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2075 pF @ 25 V 2075 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 158W (Tc) 158W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

SPD04N80C3ATMA1
SPD04N80C3ATMA1
Infineon Technologies
MOSFET N-CH 800V 4A TO252-3
BSC0901NSATMA1
BSC0901NSATMA1
Infineon Technologies
MOSFET N-CH 30V 28A/100A TDSON
FQP55N10
FQP55N10
onsemi
MOSFET N-CH 100V 55A TO220-3
FDD3860
FDD3860
onsemi
MOSFET N-CH 100V 6.2A DPAK
SQM60030E_GE3
SQM60030E_GE3
Vishay Siliconix
MOSFET N-CH 80V 120A D2PAK
IXFA130N15X3
IXFA130N15X3
IXYS
MOSFET N-CH 150V 130A TO263AA
IPD060N03LG
IPD060N03LG
Infineon Technologies
OPTLMOS N-CHANNEL POWER MOSFET
IPD30N06S2L-23
IPD30N06S2L-23
Infineon Technologies
IPD30N06 - 55V-60V N-CHANNEL AUT
IRF620S
IRF620S
Vishay Siliconix
MOSFET N-CH 200V 5.2A D2PAK
NTD4809N-35G
NTD4809N-35G
onsemi
MOSFET N-CH 30V 9.6A/58A IPAK
FDBL86063_F085
FDBL86063_F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
TPCA8128,L1Q
TPCA8128,L1Q
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 34A 8SOP

Related Product By Brand

IDW32G65C5BXKSA2
IDW32G65C5BXKSA2
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO247-3
IDD12SG60CXTMA2
IDD12SG60CXTMA2
Infineon Technologies
DIODE SCHOTTKY 600V 12A TO252-3
BSL806NL6327
BSL806NL6327
Infineon Technologies
SMALL SIGNAL N-CHANNEL MOSFET
F3L150R07W2H3B11BPSA1
F3L150R07W2H3B11BPSA1
Infineon Technologies
LOW POWER EASY AG-EASY2B-411
FP100R12N3T7B11BPSA1
FP100R12N3T7B11BPSA1
Infineon Technologies
LOW POWER ECONO AG-ECONO3B-711
SGP20N60HSXKSA1
SGP20N60HSXKSA1
Infineon Technologies
IGBT 600V 36A 178W TO220-3
AIHD04N60RFATMA1
AIHD04N60RFATMA1
Infineon Technologies
IC DISCRETE 600V TO252-3
MB90P224BPF-GT-5266
MB90P224BPF-GT-5266
Infineon Technologies
IC MCU 16BIT 96KB OTP 120PQFP
CY7C65210-24LTXI
CY7C65210-24LTXI
Infineon Technologies
IC CONTROLLER USB 24QFN
CY15E016J-SXET
CY15E016J-SXET
Infineon Technologies
IC FRAM 16KBIT I2C 1MHZ 8SOIC
S29GL128S10DHI023
S29GL128S10DHI023
Infineon Technologies
IC FLASH 128MBIT PARALLEL 64FBGA
CY7C1061AV33-12ZXIT
CY7C1061AV33-12ZXIT
Infineon Technologies
IC SRAM 16MBIT PAR 54TSOP II