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| Part Number | IPI80N04S3-06 | IPI80N04S3-03 | IPI80N04S3-04 |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Obsolete | Active | Obsolete |
| FET Type | - | N-Channel | - |
| Technology | - | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | - | 40 V | - |
| Current - Continuous Drain (Id) @ 25°C | - | 80A (Tc) | - |
| Drive Voltage (Max Rds On, Min Rds On) | - | 10V | - |
| Rds On (Max) @ Id, Vgs | - | 3.5mOhm @ 80A, 10V | - |
| Vgs(th) (Max) @ Id | - | 4V @ 120µA | - |
| Gate Charge (Qg) (Max) @ Vgs | - | 110 nC @ 10 V | - |
| Vgs (Max) | - | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | - | 7300 pF @ 25 V | - |
| FET Feature | - | - | - |
| Power Dissipation (Max) | - | 188W (Tc) | - |
| Operating Temperature | - | -55°C ~ 175°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | PG-TO262-3-1 | - |
| Package / Case | - | TO-262-3 Long Leads, I²Pak, TO-262AA | - |
