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| Part Number | IPI80N04S3-03 | IPI80N04S3-06 | IPI80N04S3-04 | IPI80N04S4-03 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Active | Obsolete | Obsolete | Active |
| FET Type | N-Channel | - | - | N-Channel |
| Technology | MOSFET (Metal Oxide) | - | - | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | - | - | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | - | - | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | - | - | 10V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 80A, 10V | - | - | 3.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 120µA | - | - | 4V @ 53µA |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | - | - | 66 nC @ 10 V |
| Vgs (Max) | ±20V | - | - | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7300 pF @ 25 V | - | - | 5260 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 188W (Tc) | - | - | 94W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | - | - | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | - | - | Through Hole |
| Supplier Device Package | PG-TO262-3-1 | - | - | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | - | - | TO-262-3 Long Leads, I²Pak, TO-262AA |
