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| Part Number | IPI80N04S2H4AKSA1 | IPI80N04S3H4AKSA1 | IPI80N04S2H4AKSA2 | IPI80N04S204AKSA1 |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Discontinued at Digi-Key | Obsolete | Obsolete | Discontinued at Digi-Key |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | 80A (Tc) | 80A (Tc) | 80A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 80A, 10V | 4.8mOhm @ 80A, 10V | 3.7mOhm @ 80A, 10V | 3.7mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 65µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 148 nC @ 10 V | 60 nC @ 10 V | 148 nC @ 10 V | 170 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V | 3900 pF @ 25 V | 4400 pF @ 25 V | 5300 pF @ 25 V |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 300W (Tc) | 115W (Tc) | 300W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Supplier Device Package | PG-TO262-3 | PG-TO262-3 | PG-TO262-3-1 | PG-TO262-3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-262-3 Long Leads, I²Pak, TO-262AA |
