IPI65R190C6XKSA1
  • Share:

Infineon Technologies IPI65R190C6XKSA1

Manufacturer No:
IPI65R190C6XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI65R190C6XKSA1 Datasheet
ECAD Model:
-
Description:
IPI65R190C6 - 650V-700V COOLMOS
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs:73 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$1.92
108

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI65R190C6XKSA1 IPI60R190C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 7.3A, 10V 190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 730µA 3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs 73 nC @ 10 V 63 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1620 pF @ 100 V 1400 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 151W (Tc) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

FQN1N60CTA
FQN1N60CTA
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
SQ2351ES-T1_GE3
SQ2351ES-T1_GE3
Vishay Siliconix
MOSFET P-CH 20V 3.2A SOT23-3
IPB60R055CFD7ATMA1
IPB60R055CFD7ATMA1
Infineon Technologies
MOSFET N-CH 650V 38A TO263-3-2
FDC634P
FDC634P
onsemi
MOSFET P-CH 20V 3.5A SUPERSOT6
PSMN1R3-30YL,115
PSMN1R3-30YL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
BSS192PE6327
BSS192PE6327
Infineon Technologies
MOSFET P-CH 250V 190MA SOT89
IRFR9N20DPBF
IRFR9N20DPBF
Infineon Technologies
MOSFET N-CH 200V 9.4A DPAK
IPP80N06S207AKSA1
IPP80N06S207AKSA1
Infineon Technologies
MOSFET N-CH 55V 80A TO220-3
TPC8126,LQ(CM
TPC8126,LQ(CM
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 11A 8SOP
BSZ023N04LSATMA1
BSZ023N04LSATMA1
Infineon Technologies
MOSFET N-CH 40V 22A/40A TSDSON
SKI10195
SKI10195
Sanken
MOSFET N-CH 100V 47A TO263
2SK2731T146
2SK2731T146
Rohm Semiconductor
MOSFET N-CH 30V 200MA SMT3

Related Product By Brand

IRLB8721PBF
IRLB8721PBF
Infineon Technologies
MOSFET N-CH 30V 62A TO220AB
IPP60R520C6
IPP60R520C6
Infineon Technologies
N-CHANNEL POWER MOSFET
IPP50R350CPXKSA1
IPP50R350CPXKSA1
Infineon Technologies
MOSFET N-CH 550V 10A TO220-3
IRF3709STRRPBF
IRF3709STRRPBF
Infineon Technologies
MOSFET N-CH 30V 90A D2PAK
IPI028N08N3GHKSA1
IPI028N08N3GHKSA1
Infineon Technologies
MOSFET N-CH 80V 100A TO262-3
SLB9635TT12FW316NOXUMA1
SLB9635TT12FW316NOXUMA1
Infineon Technologies
SECURITY IC'S/AUTHENTICATION IC'
BTS611L1E3230
BTS611L1E3230
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-7
IR11672ASPBF
IR11672ASPBF
Infineon Technologies
IC MOSFET DRIVER 200V 8-SOIC
MB95F653LNPFT-G-SNERE2
MB95F653LNPFT-G-SNERE2
Infineon Technologies
IC MCU 8BIT 12KB FLASH 24TSSOP
CY96F348RSAPMCR-GS-UJE2
CY96F348RSAPMCR-GS-UJE2
Infineon Technologies
IC MCU 16BIT 544KB FLASH 100LQFP
CY7C4231-15JXCT
CY7C4231-15JXCT
Infineon Technologies
IC SYNC FIFO MEM 2KX9 32-PLCC
S29GL256S90FAI023
S29GL256S90FAI023
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA