Infineon Technologies-IPI65R099C6XKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id:	3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:	127 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2780 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	278W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3-1
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

Infineon Technologies IPI65R099C6XKSA1