IPI60R380C6XKSA1
  • Share:

Infineon Technologies IPI60R380C6XKSA1

Manufacturer No:
IPI60R380C6XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI60R380C6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10.6A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$1.67
476

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI60R380C6XKSA1 IPI65R380C6XKSA1   IPI60R280C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) 10.6A (Tc) 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V 380mOhm @ 3.2A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA 3.5V @ 320µA 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 39 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V 710 pF @ 100 V 950 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 83W (Tc) 83W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

FDD8444
FDD8444
onsemi
MOSFET N-CH 40V 145A TO252AA
SIRA58DP-T1-GE3
SIRA58DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 60A PPAK SO-8
IPD75N04S406ATMA1
IPD75N04S406ATMA1
Infineon Technologies
MOSFET N-CH 40V 75A TO252-3
STW65N65DM2AG
STW65N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 60A TO247
2N6760
2N6760
Harris Corporation
N-CHANNEL POWER MOSFET
IXTP24N65X2
IXTP24N65X2
IXYS
MOSFET N-CH 650V 24A TO220AB
STH290N4F6-6AG
STH290N4F6-6AG
STMicroelectronics
MOSFET N-CH 40V 180A H2PAK-6
IRFPC60
IRFPC60
Vishay Siliconix
MOSFET N-CH 600V 16A TO247-3
SPP35N10
SPP35N10
Infineon Technologies
MOSFET N-CH 100V 35A TO220-3
IPB100N04S204ATMA1
IPB100N04S204ATMA1
Infineon Technologies
MOSFET N-CH 40V 100A TO263-3
NP88N04KUG-E1-AY
NP88N04KUG-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 88A TO263
NVMFS5885NLT3G
NVMFS5885NLT3G
onsemi
MOSFET N-CH 60V 10.2A 5DFN

Related Product By Brand

IDH09SG60CXKSA1
IDH09SG60CXKSA1
Infineon Technologies
DIODE SCHOTTKY 600V 9A TO220-2-2
T2160N22TOFVTXPSA1
T2160N22TOFVTXPSA1
Infineon Technologies
SCR MODULE 2800V 4600A DO200AE
BCV62BE6433HTMA1
BCV62BE6433HTMA1
Infineon Technologies
TRANS 2PNP 30V 0.1A SOT143
IPB530N15N3GATMA1
IPB530N15N3GATMA1
Infineon Technologies
MOSFET N-CH 150V 21A D2PAK
IPD42DP15LMATMA1
IPD42DP15LMATMA1
Infineon Technologies
TRENCH >=100V PG-TO252-3
IRF3709S
IRF3709S
Infineon Technologies
MOSFET N-CH 30V 90A D2PAK
PEB3324HLV1.4
PEB3324HLV1.4
Infineon Technologies
TELEPHONY INTERFACE CIRCUIT
BTS133
BTS133
Infineon Technologies
IC PWR DRIVER N-CHAN 1:1 TO220-3
IRU431-L3TR
IRU431-L3TR
Infineon Technologies
IC VREF SHUNT ADJ 1% SOT23
CY8C20066-24LTXI
CY8C20066-24LTXI
Infineon Technologies
IC CAPSENSE KRYPTON 48QFN
CY62147GE18-55BVXIT
CY62147GE18-55BVXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 48VFBGA
S29GL01GS11TFV010
S29GL01GS11TFV010
Infineon Technologies
IC FLASH 1GBIT PARALLEL 56TSOP