IPI60R380C6XKSA1
  • Share:

Infineon Technologies IPI60R380C6XKSA1

Manufacturer No:
IPI60R380C6XKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI60R380C6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10.6A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs:32 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):83W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$1.67
476

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI60R380C6XKSA1 IPI65R380C6XKSA1   IPI60R280C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 10.6A (Tc) 10.6A (Tc) 13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 3.8A, 10V 380mOhm @ 3.2A, 10V 280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 320µA 3.5V @ 320µA 3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V 39 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 100 V 710 pF @ 100 V 950 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 83W (Tc) 83W (Tc) 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

SCTWA10N120
SCTWA10N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
GAN041-650WSBQ
GAN041-650WSBQ
Nexperia USA Inc.
GAN041-650WSB/SOT429/TO-247
AUIRFS3107TRL
AUIRFS3107TRL
Infineon Technologies
MOSFET N-CH 75V 195A D2PAK
IRFR9010TRPBF
IRFR9010TRPBF
Vishay Siliconix
MOSFET P-CH 50V 5.3A DPAK
2SK3564(STA4,Q,M)
2SK3564(STA4,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 900V 3A TO220SIS
IRLU024PBF
IRLU024PBF
Vishay Siliconix
MOSFET N-CH 60V 14A TO251AA
IXTH22N50P
IXTH22N50P
IXYS
MOSFET N-CH 500V 22A TO247
FDU3706
FDU3706
onsemi
MOSFET N-CH 20V 14.7A/50A IPAK
SSR1N60BTM_F080
SSR1N60BTM_F080
onsemi
MOSFET N-CH 600V 900MA DPAK
BSC889N03LSGATMA1
BSC889N03LSGATMA1
Infineon Technologies
MOSFET N-CH 30V 13A/45A TDSON
MCH3475-TL-W
MCH3475-TL-W
onsemi
MOSFET N-CH 30V 1.8A SC70
PHP78NQ03LT,127
PHP78NQ03LT,127
NXP USA Inc.
MOSFET N-CH 25V 75A TO220AB

Related Product By Brand

ESD134B1W0201E6327XTSA1
ESD134B1W0201E6327XTSA1
Infineon Technologies
TVS DIODES
TD780N18KOFHPSA1
TD780N18KOFHPSA1
Infineon Technologies
THYR / DIODE MODULE DK
T360N28TOFXPSA1
T360N28TOFXPSA1
Infineon Technologies
SCR MODULE 2800V 550A DO200AA
IRF7526D1
IRF7526D1
Infineon Technologies
MOSFET P-CH 30V 2A MICRO8
IRFS41N15DTRR
IRFS41N15DTRR
Infineon Technologies
MOSFET N-CH 150V 41A D2PAK
IRF2804S-7PPBF
IRF2804S-7PPBF
Infineon Technologies
MOSFET N-CH 40V 160A D2PAK
IPP50R299CPXKSA1
IPP50R299CPXKSA1
Infineon Technologies
MOSFET N-CH 550V 12A TO220-3
IR2170
IR2170
Infineon Technologies
IC CURRENT SENSE 600V 1MA 8-DIP
IR3840MTRPBF
IR3840MTRPBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 12A PQFN
S6SBP202A1FVA1001
S6SBP202A1FVA1001
Infineon Technologies
KIT S6SBP202A
MB91243PFV-GS-112E1
MB91243PFV-GS-112E1
Infineon Technologies
IC MCU 144LQFP
S25FL116K0XMFN043
S25FL116K0XMFN043
Infineon Technologies
IC FLASH 16MBIT SPI/QUAD 8SOIC