IPI60R280C6
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Infineon Technologies IPI60R280C6

Manufacturer No:
IPI60R280C6
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI60R280C6 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 13.8A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:13.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:280mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 430µA
Gate Charge (Qg) (Max) @ Vgs:43 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:950 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI60R280C6 IPI65R280C6  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 600 V -
Current - Continuous Drain (Id) @ 25°C 13.8A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs 280mOhm @ 6.5A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 430µA -
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 104W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO262-3-1 -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA -

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