IPI60R190C6XKSA1
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Infineon Technologies IPI60R190C6XKSA1

Manufacturer No:
IPI60R190C6XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI60R190C6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20.2A TO262-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI60R190C6XKSA1 IPI65R190C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 630µA 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 73 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 100 V 1620 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 151W (Tc) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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