IPI60R190C6XKSA1
  • Share:

Infineon Technologies IPI60R190C6XKSA1

Manufacturer No:
IPI60R190C6XKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI60R190C6XKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20.2A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:63 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):151W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$2.65
93

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI60R190C6XKSA1 IPI65R190C6XKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 9.5A, 10V 190mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 630µA 3.5V @ 730µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V 73 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 100 V 1620 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 151W (Tc) 151W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

BSN20BKR
BSN20BKR
Nexperia USA Inc.
MOSFET N-CH 60V 265MA TO236AB
IPA80R310CEXKSA2
IPA80R310CEXKSA2
Infineon Technologies
MOSFET N-CH 800V 16.7A TO220-FP
IST019N08NM5AUMA1
IST019N08NM5AUMA1
Infineon Technologies
TRENCH 40<-<100V PG-HSOF-5
ZXMP10A18K
ZXMP10A18K
Diodes Incorporated
MOSFET P-CH 100V 3.8A TO252-3
SPI35N10
SPI35N10
Infineon Technologies
MOSFET N-CH 100V 35A TO262-3
SI1065X-T1-E3
SI1065X-T1-E3
Vishay Siliconix
MOSFET P-CH 12V 1.18A SC89-6
STD60N55F3
STD60N55F3
STMicroelectronics
MOSFET N-CH 55V 80A DPAK
TPC8014(TE12L,Q,M)
TPC8014(TE12L,Q,M)
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 11A 8SOP
IPS50R520CP
IPS50R520CP
Infineon Technologies
MOSFET N-CH 550V 7.1A TO251-3
IXTH41N25
IXTH41N25
IXYS
MOSFET N-CH 250V 41A TO247
2SK3820-DL-E
2SK3820-DL-E
onsemi
MOSFET N-CH 100V 26A SMP-FD
RD3H200SNTL1
RD3H200SNTL1
Rohm Semiconductor
MOSFET N-CH 45V 20A TO252

Related Product By Brand

BSP296L6433
BSP296L6433
Infineon Technologies
SMALL-SIGNAL N-CHANNEL MOSFET
IPA075N15N3
IPA075N15N3
Infineon Technologies
N-CHANNEL POWER MOSFET
IRFU3504Z
IRFU3504Z
Infineon Technologies
MOSFET N-CH 40V 42A IPAK
FF600R12ME4AB11BOSA1
FF600R12ME4AB11BOSA1
Infineon Technologies
IGBT MODULE 1200V 3350W
IGB30N60T
IGB30N60T
Infineon Technologies
IGB30N60 - DISCRETE IGBT WITHOUT
PEB2096HV2.1
PEB2096HV2.1
Infineon Technologies
OCTAT-P OCTAL TRANSCEICER
TLE9262QXV33XUMA1
TLE9262QXV33XUMA1
Infineon Technologies
IC INTERFACE SPECIALIZED 48VQFN
CY9AF111KPMC1-G-JNE2
CY9AF111KPMC1-G-JNE2
Infineon Technologies
IC MCU 32BIT 96KB FLASH 48LQFP
MB90F428GCZPFV-GSE1
MB90F428GCZPFV-GSE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 100LQFP
CY9AF311NABGL-GE1
CY9AF311NABGL-GE1
Infineon Technologies
IC MCU 32BIT 64KB FLASH 112PFBGA
S29AL008J70TFI020
S29AL008J70TFI020
Infineon Technologies
IC FLASH 8MBIT PARALLEL 48TSOP
CY9AFA44MBBGL-GK9E1
CY9AFA44MBBGL-GK9E1
Infineon Technologies
IC MCU 32BIT 288KB FLASH 96FBGA