IPI50R250CPXKSA1
  • Share:

Infineon Technologies IPI50R250CPXKSA1

Manufacturer No:
IPI50R250CPXKSA1
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI50R250CPXKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 13A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id:3.5V @ 520µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1420 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

$1.02
575

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI50R250CPXKSA1 IPI50R350CPXKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 500 V -
Current - Continuous Drain (Id) @ 25°C 13A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 520µA -
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1420 pF @ 100 V -
FET Feature - -
Power Dissipation (Max) 114W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO262-3 -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA -

Related Product By Categories

IRFZ44NSTRLPBF
IRFZ44NSTRLPBF
Infineon Technologies
MOSFET N-CH 55V 49A D2PAK
IPB60R360P7ATMA1
IPB60R360P7ATMA1
Infineon Technologies
MOSFET N-CH 600V 9A D2PAK
STF100N10F7
STF100N10F7
STMicroelectronics
MOSFET N CH 100V 45A TO-220FP
MMIX1T132N50P3
MMIX1T132N50P3
IXYS
MOSFET N-CH 500V 63A POLAR3
DMN3026LVT-7
DMN3026LVT-7
Diodes Incorporated
MOSFET N-CH 30V 6.6A TSOT26
ZXMP6A17GTA
ZXMP6A17GTA
Diodes Incorporated
MOSFET P-CH 60V 3A SOT223
TK56A12N1,S4X
TK56A12N1,S4X
Toshiba Semiconductor and Storage
MOSFET N-CH 120V 56A TO220SIS
SIHP24N65E-E3
SIHP24N65E-E3
Vishay Siliconix
MOSFET N-CH 650V 24A TO220AB
AUIRFS3107-7P
AUIRFS3107-7P
Infineon Technologies
MOSFET N-CH 75V 240A D2PAK
BSZ058N03MSGATMA1
BSZ058N03MSGATMA1
Infineon Technologies
MOSFET N-CH 30V 14A/40A 8TSDSON
IXFK44N50Q
IXFK44N50Q
IXYS
MOSFET N-CH 500V 44A TO264AA
RW1E015RPT2R
RW1E015RPT2R
Rohm Semiconductor
MOSFET P-CH 30V 1.5A WEMT6

Related Product By Brand

ESD102U102ELSE6327XTSA1
ESD102U102ELSE6327XTSA1
Infineon Technologies
TVS DIODE 3.3VWM 11VC
IRDC3853
IRDC3853
Infineon Technologies
BOARD EVAL FOR IR3853
BAT6406E6327HTSA1
BAT6406E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 40V SOT23
T1220N22TOFVTXPSA1
T1220N22TOFVTXPSA1
Infineon Technologies
SCR MODULE 2800V 2625A DO200AC
IPI80N06S2L11AKSA1
IPI80N06S2L11AKSA1
Infineon Technologies
MOSFET N-CH 55V 80A TO262-3
CY8C4146FNI-S433T
CY8C4146FNI-S433T
Infineon Technologies
NO WARRANTY
MB89695BPFM-G-255-BND
MB89695BPFM-G-255-BND
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB90347ASPMC-GS-403E1
MB90347ASPMC-GS-403E1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
MB90362TESPMT-GS-112E1
MB90362TESPMT-GS-112E1
Infineon Technologies
IC MCU 16BIT 64KB MROM 48LQFP
MB91243PFV-GS-103-BNDE1
MB91243PFV-GS-103-BNDE1
Infineon Technologies
IC MCU 144LQFP
CY90F463APMC-G-SPE1
CY90F463APMC-G-SPE1
Infineon Technologies
IC MCU 16BIT 128KB FLASH 64QFP
S25FL512SAGMFVG13
S25FL512SAGMFVG13
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC