IPI147N12N3G
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Infineon Technologies IPI147N12N3G

Manufacturer No:
IPI147N12N3G
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI147N12N3G Datasheet
ECAD Model:
-
Description:
IPI147N12 - 12V-300V N-CHANNEL P
Delivery:
Payment:
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iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):120 V
Current - Continuous Drain (Id) @ 25°C:56A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14.7mOhm @ 56A, 10V
Vgs(th) (Max) @ Id:4V @ 61µA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3220 pF @ 60 V
FET Feature:- 
Power Dissipation (Max):107W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI147N12N3G IPI144N12N3G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 120 V -
Current - Continuous Drain (Id) @ 25°C 56A (Ta) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 14.7mOhm @ 56A, 10V -
Vgs(th) (Max) @ Id 4V @ 61µA -
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 3220 pF @ 60 V -
FET Feature - -
Power Dissipation (Max) 107W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package PG-TO262-3-1 -
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA -

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