IPI126N10N3 G
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Infineon Technologies IPI126N10N3 G

Manufacturer No:
IPI126N10N3 G
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IPI126N10N3 G Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 58A TO262-3
Delivery:
Payment:
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iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:58A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:12.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
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Similar Products

Part Number IPI126N10N3 G IPI126N10N3G  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 58A (Tc) 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 12.6mOhm @ 46A, 10V 12.6mOhm @ 46A, 10V
Vgs(th) (Max) @ Id 3.5V @ 46µA 3.5V @ 46µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 50 V 2500 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 94W (Tc) 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3 PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

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