Infineon Technologies-IPI120P04P4L03AKSA1 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 340µA
Gate Charge (Qg) (Max) @ Vgs:	234 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	15000 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	136W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3-1
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

Infineon Technologies IPI120P04P4L03AKSA1