IPI120N08S404AKSA1
  • Share:

Infineon Technologies IPI120N08S404AKSA1

Manufacturer No:
IPI120N08S404AKSA1
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IPI120N08S404AKSA1 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 120A TO262-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6450 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):179W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO262-3-1
Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
0 Remaining View Similar

In Stock

-
267

Please send RFQ , we will respond immediately.

Similar Products

Part Number IPI120N08S404AKSA1 IPI120N08S403AKSA1  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Not For New Designs
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 100A, 10V 2.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 120µA 4V @ 223µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V 167 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 25 V 11550 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 179W (Tc) 278W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package PG-TO262-3-1 PG-TO262-3-1
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-262-3 Long Leads, I²Pak, TO-262AA

Related Product By Categories

PJS6461-AU_S1_000A1
PJS6461-AU_S1_000A1
Panjit International Inc.
60V P-CHANNEL ENHANCEMENT MODE M
FQD8N25TF
FQD8N25TF
Fairchild Semiconductor
MOSFET N-CH 250V 6.2A DPAK
NX3008PBKW,115
NX3008PBKW,115
Nexperia USA Inc.
MOSFET P-CH 30V 200MA SOT323
FQI7N80TU
FQI7N80TU
Fairchild Semiconductor
MOSFET N-CH 800V 6.6A I2PAK
SI7172DP-T1-GE3
SI7172DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 200V 25A PPAK SO-8
FDPF18N20FT
FDPF18N20FT
onsemi
MOSFET N-CH 200V 18A TO220F
IRFH5302TRPBF
IRFH5302TRPBF
Infineon Technologies
MOSFET N-CH 30V 32A/100A PQFN
STP3N80K5
STP3N80K5
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220
AOWF9N70
AOWF9N70
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 9A TO262F
TK6A65W,S5X
TK6A65W,S5X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 5.8A TO220SIS
PSMN005-30K,518
PSMN005-30K,518
Nexperia USA Inc.
MOSFET N-CH 30V 20A 8SO
TSM60N06CP ROG
TSM60N06CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 60V 66A TO252

Related Product By Brand

BSO130N03MSG
BSO130N03MSG
Infineon Technologies
SMALL SIGNAL N-CHANNEL MOSFET
IPI60R600CPAKSA1
IPI60R600CPAKSA1
Infineon Technologies
MOSFET N-CH 600V 6.1A TO262-3
CY9AF111NPMC-G-MJE1
CY9AF111NPMC-G-MJE1
Infineon Technologies
IC MCU 32BIT FLASH LQFP
CY9AF341LBPMC-G-JNE2
CY9AF341LBPMC-G-JNE2
Infineon Technologies
IC MCU 32BIT 96KB FLASH 64LQFP
MB90020PMT-GS-243E1
MB90020PMT-GS-243E1
Infineon Technologies
IC MCU 120LQFP
CY96F675RBPMC1-GS-UJE2
CY96F675RBPMC1-GS-UJE2
Infineon Technologies
IC MCU 16BIT 160KB FLASH 64LQFP
CY7C1049GN30-10ZSXI
CY7C1049GN30-10ZSXI
Infineon Technologies
IC SRAM 4MBIT PARALLEL 44TSOP II
S25FL256SAGBHBA03
S25FL256SAGBHBA03
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 24BGA
S25FL132K0XNFI010
S25FL132K0XNFI010
Infineon Technologies
IC FLASH 32MBIT SPI/QUAD 8WSON
S29GL256P10FFIS13
S29GL256P10FFIS13
Infineon Technologies
IC FLASH 256MBIT PARALLEL 64FBGA
S34MS01G200GHI000
S34MS01G200GHI000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 67BGA
CY7C1051H30-10BVXI
CY7C1051H30-10BVXI
Infineon Technologies
IC SRAM 8MBIT ASYNC 48BGA